smd type ic smd type transistors 1 emitter 2 base 3 collector 2SC4413 features adoption of fbet process. high dc current gain. low collector-to-emitter saturation voltage. high vebo. small cob. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 15 v collector current i c 100 ma collector current(pulse) i cp 200 ma base current i b 20 ma collector dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 40v, i e =0 0.1 a emitter cutoff current i ebo v eb = 10v, i c =0 0.1 a dc current gain h fe v ce =5v,i c = 10ma 800 1500 3200 gain bandwidth product f t v ce = 10v , i c = 10ma 200 mhz output capacitance c ob v cb = 10v, f = 1mhz 1.5 pf collector-to-emitter saturation voltage v ce(sat) i c = 50ma , i b =1ma 0.1 0.5 v base-to-emitter saturation voltage v be(sat) i c = 50ma , i b =1ma 0.8 1.1 v collector-to-base breakdown voltage v (br)cbo i c = 10a , i e =0 60 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma,r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e = 10a , i c =0 15 v marking marking gy product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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